A triple-well resonant tunneling diode for multiple-valued logic application
نویسندگان
چکیده
منابع مشابه
High magnetic field tunneling transport in a double quantum well-triple barrier resonant tunneling diode
We have measured the magnetotransport of double GaAs quantum well-triple AlAs barrier resonant tunneling heterostructures in pulsed magnetic fields up to 48 T, and temperatures down to 0.3 K. The tunneling structure is designed for a near-simultaneous (triple) resonance, under bias, of the quantum well energy levels and the lowest quasi-2D emitter state. The fan chart of the I(V) resonances is ...
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A newly structured triple-well resonant tunneling diode (RTD) is proposed as a triple-valued logic device. The superiority of this new RTD for triple-valued logic application i s demonstrated with numerical simulation based on the transfer matrix method. This new RTD exhibits significant double-negative differential resistance, and the two current peak voltages are independently controlled with...
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We present a low-temperature ~mK! magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled ...
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The ability to use resonant tunneling diodes (RTDs) as both transmitters and receivers is an emerging topic, especially with regards to wireless communications. Successful data transmission has been achieved using electronic RTDs with carrier frequencies exceeding 0.3 THz. Specific optical-based RTDs, which act as photodetectors, have been developed by adjusting the device structure to include ...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 1988
ISSN: 0741-3106,1558-0563
DOI: 10.1109/55.745